Memory devices, systems, and methods of fabrication

ABSTRACT

Memory devices include an array of memory cells including magnetic tunnel junction regions. The array of memory cells includes access lines extending in a first direction and data lines extending in a second direction transverse to the first direction. A common source includes first linear portions and second linear portions extending at an acute angle to each of the first direction and the second direction. Electronic systems include such a memory device operably coupled to a processor, to which at least one input device and at least one output device is operably coupled. Methods of forming such an array of memory cells including a common source.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation-in-part application of U.S. patentapplication Ser. No. 15/399,509, filed Jan. 5, 2017, now U.S. patentSer. No. 10/014,345, issued Jul. 3, 2018, titled “MAGNETIC MEMORY DEVICEWITH GRID-SHAPED COMMON SOURCE PLATE, SYSTEM, AND METHOD OFFABRICATION,” the disclosure of which is incorporated herein in itsentirety by this reference.

TECHNICAL FIELD

Embodiments disclosed herein relate to memory devices and electronicsystems including a memory device. More specifically, embodimentsdisclosed herein relate to semiconductor structures and cell arraystructures for memory devices (e.g., Magnetic Random Access Memory(MRAM) devices), to electronic systems including such memory devices,and to methods of forming such memory devices.

BACKGROUND

MRAM is a non-volatile computer memory technology based onmagnetoresistance. One type of MRAM cell is a spin torque transfer MRAM(STT-MRAM) cell, which includes a magnetic cell core supported by asubstrate. As shown in FIG. 1, a known STT-MRAM cell 10 generallyincludes at least two magnetic regions, for example, a “fixed region” 12(also known in the art as a “pinned region”) and a “free region” 14,with a non-magnetic region 16 between the fixed region 12 and the freeregion 14. The fixed region 12, free region 14, and non-magnetic region16 form a magnetic tunnel junction region (MTJ) of the STT-MRAM cell 10.The STT-MRAM cell 10 may also include a first electrode 18 operablycoupled to the fixed region 12 and a second electrode 20 operablycoupled to the free region 14. The fixed region 12 and the free region14 may exhibit magnetic orientations that are either horizontallyoriented (“in-plane”) as shown in FIG. 1 by arrows, or perpendicularlyoriented (“out-of-plane”) relative to the width of the regions. Thefixed region 12 includes a magnetic material that has a substantiallyfixed magnetic orientation (e.g., a non-switchable magnetic orientationduring normal operation). The free region 14, on the other hand,includes a magnetic material that has a magnetic orientation that may beswitched, during operation of the cell, between a “parallel”configuration and an “anti-parallel” configuration. In the parallelconfiguration, the magnetic orientations of the fixed region and thefree region are directed in the same direction (e.g., north and north,east and east, south and south, or west and west, respectively). In the“anti-parallel” configuration, the magnetic orientations of the fixedregion 12 and the free region 14 are directed in opposite directions(e.g., north and south, east and west, south and north, or west andeast, respectively). In the parallel configuration, the STT-MRAM cell 10exhibits a lower electrical resistance across the magnetoresistiveelements (e.g., the fixed region 12 and free region 14). This state oflow electrical resistance may be defined as a “0” logic state of theSTT-MRAM cell 10. In the anti-parallel configuration, the STT-MRAM cell10 exhibits a higher electrical resistance across the magnetoresistiveelements. This state of high electrical resistance may be defined as a“1” logic state of the STT-MRAM cell 10.

Switching of the magnetic orientation of the free region 14 may beaccomplished by passing a programming current through the STT-MRAM cell10 and the fixed region 12 and free region 14 therein. The fixed region12 polarizes the electron spin of the programming current, and torque iscreated as the spin-polarized current passes through the cell 10. Thespin-polarized electron current exerts torque on the free region 14.When the torque of the spin-polarized electron current passing throughthe cell 10 is greater than a critical switching current density (J_(r))of the free region 14, the direction of the magnetic orientation of thefree region 14 is switched. Thus, the programming current can be used toalter the electrical resistance across the magnetic fixed and freeregions 12, 14. The resulting high or low electrical resistance statesacross the magnetoresistive elements enable the read and writeoperations of the STT-MRAM cell. After switching the magneticorientation of the free region 14 to achieve the parallel configurationor the anti-parallel configuration associated with a desired logicstate, the magnetic orientation of the free region 14 is usually desiredto be maintained, during a “storage” stage, until the STT-MRAM cell 10is to be rewritten to a different configuration (i.e., to a differentlogic state). Accordingly, the STT-MRAM cell 10 is non-volatile andholds its logic state even in the absence of applied power.

High density cell array layouts are desired to obtain STT-MRAM deviceswith high data storage capabilities. However, STT-MRAM conventionallyrequires higher current to read and/or write logic states compared toother non-volatile memory, such as NAND Flash memory. Severalpublications describe efforts to achieve high density cell array layoutand/or to reduce the current required to read and/or write logic statesin STT-MRAM devices. For example, U.S. Patent Application PublicationNo. 2007/0279963 to Kenji Tsuchida et al., filed Feb. 9, 2007, titled“Semiconductor Memory” (hereinafter “the '963 Publication”) describes anSTT-MRAM cell layout with a dual-access trench. The '963 Publicationdescribes a conventional layout that achieves a cell size of 12F², whereF is a smallest feature size (e.g., width of a line, trench, or otherfeature). The '963 Publication describes staggering the cells to achievea smaller 8F² cell size. The article by Bo Zhao et al. titled“Architecting a Common-Source-Line Array for Bipolar Non-Volatile MemoryDevices,” published in the Proceedings of the Design, Automation & Testin Europe Conference & Exhibition held Mar. 12-16, 2012 (hereinafter“Zhao”), describes a source line that is parallel to a word linedirection and that is used as a source for all cells along the sourceline. Zhao also describes a cell arrangement to achieve a 6F² cell size.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a simplified schematic side view of a known STT-MRAM cell.

FIG. 2A is a simplified schematic top view of a linear array of STT-MRAMcells.

FIG. 2B is a cross-sectional electrical circuit diagram taken along andthrough a data line of the linear array of FIG. 2A.

FIG. 2C is a schematic cross-sectional diagram taken along and through asource power line of the linear array of FIG. 2A.

FIG. 3A is a simplified schematic top view of an array of cellsaccording to an embodiment of the present disclosure.

FIG. 3B is a cross-sectional electrical circuit diagram taken along andthrough a data line of the array of FIG. 3A.

FIG. 3C is a schematic cross-sectional diagram taken along and through asource power line of the array of FIG. 3A.

FIG. 3D is a simplified schematic top view of a portion of the array ofFIG. 3A.

FIG. 4A shows a representation of a linear array of cells to illustrateresistive properties of the linear array.

FIG. 4B shows a representation of an array of cells according to anembodiment of the present disclosure to illustrate resistive propertiesof the array.

FIG. 5 is a simplified schematic top view of the array of cellsaccording to the embodiment of FIG. 3A.

FIG. 6A shows a cross-sectional view of the array of cells taken fromline A-A of FIG. 5.

FIG. 6B shows a cross-sectional view of the array of cells taken fromline B-B of FIG. 5.

FIG. 6C shows a cross-sectional view of a peripheral region of asemiconductor device including the array of cells.

FIG. 6D shows a cross-sectional view of the embodiment of the array ofcells of FIG. 6A.

FIGS. 7 through 14 show a method of forming an array of memory cellsaccording to an embodiment of the present disclosure.

FIG. 15 shows a schematic block diagram of an electronic systemaccording to an embodiment of the present disclosure.

DETAILED DESCRIPTION

The illustrations included herewith are not meant to be actual views ofany particular systems or structures, but are merely idealizedrepresentations that are employed to describe embodiments of the presentdisclosure. Elements and features common between figures may retain thesame numerical designation.

The following description provides specific details, such as materialtypes, material thicknesses, and processing conditions in order toprovide a thorough description of embodiments described herein. However,a person of ordinary skill in the art will understand that theembodiments disclosed herein may be practiced without employing thesespecific details. Indeed, the embodiments may be practiced inconjunction with conventional fabrication techniques and material typesemployed in the semiconductor industry. In addition, the descriptionprovided herein does not form a complete process flow for manufacturingsemiconductor devices, cell array structures, or memory cells, and thesemiconductor devices, cell array structures, and memory cells describedbelow do not form a complete semiconductor device, cell structure, ormemory cell. Only those process acts and structures necessary for one ofordinary skill in the art to understand the embodiments described hereinare described in detail below. Additional acts to form a completesemiconductor device and a memory cell array may be performed byconventional techniques.

As used herein, the term “substantially” in reference to a givenparameter, property, or condition means and includes to a degree thatone skilled in the art would understand that the given parameter,property, or condition is met with a small degree of variance, such aswithin acceptable manufacturing tolerances. For example, a parameterthat is substantially met may be at least about 90% met, at least about95% met, or even at least about 99% met.

As used herein, any relational term, such as “first,” “second,” “over,”“top,” “bottom,” “overlying,” “underlying,” etc., is used for clarityand convenience in understanding the disclosure and accompanyingdrawings and does not connote or depend on any specific preference,orientation, or order, except where the context clearly indicatesotherwise.

As used herein, the terms “vertical” and “horizontal” merely refer to adrawing figure as oriented on the drawing sheet, and in no way arelimiting of orientation of a memory cell, array, or semiconductordevice, or any portion thereof.

As used herein, the term “forming” means and includes any method ofcreating, building, depositing, and/or patterning a material. Forexample, forming may be accomplished by atomic layer deposition (ALD),chemical vapor deposition (CVD), physical vapor deposition (PVD),sputtering, co-sputtering, spin-coating, diffusing, depositing, growing,or any other technique known in the art of semiconductor fabrication.Material may be formed and/or patterned into various shapes andconfigurations using known techniques, such as isotropic etching,anisotropic etching, chemical-mechanical polishing (CMP), ablating, etc.Depending on the specific material to be formed, the technique forforming the material may be selected by a person of ordinary skill inthe art.

According to some embodiments, a memory cell array structure may includea common source providing electrical access to the sources of all memorycells in the array. The common source may include linear portions thatextend in two directions that are at a first angle to data lines and ata second angle to access lines of the array. In other words, the commonsource may comprise a plate of conductive material having openingsthrough which bit contacts for MTJs respectively extend. The MTJs of thememory cell array may be staggered, in that the MTJs of one column orrow may be offset from MTJs of an immediately adjacent column or row.Thus, the common source may electrically connect to memory cells in twotransverse directions (e.g., a row direction and a column direction).Memory (e.g., STT-MRAM) devices including the disclosed memory cellarrays with common source may exhibit improved (i.e., lower) electricalcurrent requirements and may allow use of higher resistivity materialsas source line material, compared to cell arrays with conventionallinear source lines.

FIGS. 2A-2C and the accompanying description thereof in thisspecification are provided to enhance an understanding by one ofordinary skill in the art of embodiments of the present disclosure, andare not admitted by the applicant as prior art for any purpose.

FIG. 2A illustrates a linear array 100 of STT-MRAM cells 101 includingMTJs 102 shown by shaded circles in FIG. 2A. FIG. 2B is across-sectional electrical circuit diagram taken along and through adata line 104 of the linear array 100 of FIG. 2A. FIG. 2C is a schematiccross-sectional diagram taken along and through a source power line 113of the linear array 100 of FIG. 2A. Certain elements shown in FIG. 2Aare shown as transparent to more clearly illustrate structures that areoverlying or underlying each other. The linear array 100 may includestructures for operation of a device or system including the lineararray 100 to electrically access and select, read from, write to, and/orerase data stored in the MTJs 102, such as data lines (e.g., bit lines)104, access lines 106 (e.g., word lines), source lines 108, sourcecontacts 110 (shown as shaded boxes in FIG. 2A), source line powercontacts 111 (shown as shaded triangles in FIG. 2A), source power lines113 (shown in dashed lines in FIG. 2A), and as well as other contacts,conductive lines, active areas, isolation trenches, substrates,dielectric materials, and layers that are not shown in FIG. 2A forclarity but that are known to one of ordinary skill in the art. The MTJs102 of the linear array 100 may be aligned in a column direction (e.g.,vertically from the perspective of FIG. 2A) parallel to the access lines106 and in a row direction (e.g., horizontally from the perspective ofFIG. 2A) perpendicular to the column direction and parallel to the datalines 104.

The data lines 104 are electrically conductive materials that may extendalong (e.g., over) and may be operably coupled to MTJs 102 aligned inthe row direction. The access lines 106 may be formed in access trenchesformed in a semiconductor substrate underlying the MTJs 102 and mayinclude an electrically conductive gate material and a gate dielectricmaterial, forming an access device (e.g., transistor) for eachrespective MTJ 102. The access lines 106 may extend along (e.g., underand parallel to) MTJs 102 aligned in the column direction. In theconfiguration shown in FIG. 2A, two access lines 106 may be operably(e.g., electrically) coupled to access devices that are coupled to eachcolumn of MTJs 102, such that the linear array 100 is a so-called“dual-gate” structure of STT-MRAM cells 101.

The source lines 108 may also extend along (e.g., parallel to) MTJs 102aligned in the column direction, such as between two adjacent columns ofMTJs 102. The source contacts 110 may operably couple the source lines108 to two access lines 106 of adjacent columns of MTJs 102. The sourcecontacts 110 are not operably coupled to the data lines 104, other thanthe indirect connection through the access lines 106 and MTJs 102.Accordingly, the source lines 108 and source contacts 110 may be sharedbetween two adjacent columns of MTJs 102. Source line power contacts 111may be coupled to end portions of the source lines 108, which, in turn,may be coupled to one or more source power lines 113 for applying avoltage to the source lines 108.

In use and operation, when an STT-MRAM cell 101 including an MTJ 102 ofthe linear array 100 is selected to be programmed, a programming currentis applied to the STT-MRAM cell 101, and the current is spin-polarizedby the fixed region of the MTJ 102 and exerts a torque on the freeregion of the MTJ 102, which switches the magnetization of the freeregion to “write to” or “program” the MTJ 102. In a read operation ofthe STT-MRAM cell 101, a current is used to detect a resistance state ofthe MTJ 102.

To initiate programming of a particular STT-MRAM cell 101, peripheralread/write circuitry may generate a write current (i.e., a programmingcurrent) to the data line 104 and the source line 108 operably coupled(e.g., electrically coupled) to the MTJ 102 of the particular STT-MRAMcell 101. The polarity of the voltage between the data line 104 and thesource line 108 determines the switch (or maintenance) in magneticorientation of the free region in the MTJ 102. By changing the magneticorientation of the free region with the spin polarity, the free regionis magnetized according to the spin polarity of the programming currentand the programmed logic state is written to the MTJ 102.

To read data from the MTJ 102, the peripheral read/write circuitrygenerates a read voltage to the data line 104 and the source line 108through the MTJ 102 and the access lines 106 operably coupled to the MTJ102. The programmed state of the STT-MRAM cell 101 relates to theelectrical resistance across the MTJ 102, which may be determined by apotential difference (i.e., voltage) between the data line 104 and thesource line 108. A high resistance across the MTJ 102 may be read as alogic state of “1,” and a low resistance across the MTJ 102 may be readas a logic state of “0,” for example.

FIG. 3A illustrates an array 200 of memory cells 201 including MTJs 202shown by shaded circles in FIG. 3A. FIG. 3B is a cross-sectionalelectrical circuit diagram taken along and through a data line 204 ofthe array 200 of FIG. 3A. FIG. 3C is a cross-sectional electricalcircuit diagram taken along and through a source power line 213 of thearray 200 of FIG. 3A. Certain elements shown in FIG. 3A are shown astransparent to more clearly illustrate structures that are overlying orunderlying each other. The array 200 may include structures foroperation of a device or system including the array 200 to electricallyaccess and select, read from, write to, and/or erase data stored in theMTJs 202, such as data lines 204 (e.g., bit lines), access lines 206(e.g., word lines), a common source 208, source contacts 210 (shown asshaded boxes in FIG. 3A), source power contacts 211 (shown as shadedtriangles in FIG. 3A), the source power lines 213 (shown in dashed linesin FIG. 3A), and as well as other contacts, conductive lines, activeareas, isolation trenches, substrates, dielectric materials, and layersthat are not shown in FIG. 3A for clarity but that are known to one ofordinary skill in the art. A column direction of the array 200 may beparallel to the access lines 206. A row direction of the array 200 maybe perpendicular to the column direction and parallel to the data lines204.

The MTJs 202 in the array 200 may be staggered, such that MTJs 202 inone column are offset (i.e., not aligned in a row direction) from MTJs202 in an immediately adjacent column. Similarly, MTJs 202 in one roware offset (i.e., not aligned in a column direction) from MTJs 202 in animmediately adjacent row. The MTJs 202 of the array 200 may be alignedin one or more directions at an angle to the column direction (i.e., adirection parallel to the access lines 206) and to the row direction(i.e., a direction parallel to the data lines 204). By way of exampleand not limitation, the MTJs 202 may be aligned in a first angleddirection 212 at an angle of between about 35 degrees and about 55degrees, such as about 45 degrees, from the column direction and at acomplementary angle from the row direction. The MTJs 202 may also bealigned in a second angled direction 214 at an angle of between about 35degrees and about 55 degrees, such as about 45 degrees, from the rowdirection and at a complementary angle from the column direction.

Each of the memory cells 201 of the array 200 may have a cell size ofabout 8F², where cell size is given in units of F² and F is the minimumfeature size (e.g., width of a line, trench, or other feature). Thefeature size F may be the same in the column and row directions or maybe different in the column and row directions. FIG. 3D illustrates aportion of the array 200 of FIG. 3A with the memory cells 201 having an8F² configuration with 4F in the row direction and 2F in the columndirection. By way of example, a pitch (i.e., line width plus requiredspacing) in the column direction may include a unit F for the width ofthe data lines 204 (e.g., bit lines) and another unit F for the spacingbetween the data lines 204, resulting in a combined 2F in the columndirection. A pitch in the row direction may include, for example, thewidth of the access lines 206 (e.g., word lines) being half of the widthof the data lines 204 if the access lines 206 are shared with anadjacent memory cell 201, the width of a source contact 210, the widthof an adjacent access line 206, and half of the space between features,resulting in 4F of a paired access line 207, which results in an overallarea of 8F² (i.e., 2F*4F).

The data lines 204 are electrically conductive materials that may extendalong (e.g., over) and may be operably coupled to MTJs 202 aligned inthe row direction, being MTJs 202 in every other column. The accesslines 206 may be formed in access trenches formed in a semiconductorsubstrate underlying the MTJs 202 and may include an electricallyconductive gate material and a gate dielectric material, forming anaccess device for each respective MTJ 202. The access lines 206 mayextend along (e.g., under and parallel to) MTJs 202 aligned in thecolumn direction, being MTJs 202 in every other column. Similar to theconfiguration described above in connection with FIG. 2A, two accesslines 206 of the array 200 illustrated in FIG. 3A may be operablycoupled to access devices coupled to each column of MTJs 202, such thatthe array 200 is a dual-gate structure of memory cells 201. Thedual-gate arrangement, in comparison to a so-called “single-gate”arrangement in which a single word line is operably coupled to eachcolumn of cells, may result in an increase of gate width, and thereforecurrent drivability, by connection of two selection transistors inparallel to each MTJ 202. Some conventional STT-MRAM memory cells withdual-gate structures may have a cell size of about 12F². However, thelayout of the cells 201 of the present disclosure may result in a cellsize of about 8F². In operation, certain access lines 206 may beunselected by applying a negative voltage to the access lines 206.

FIG. 4A illustrates resistive properties of the source lines 108 of thelinear array 100 shown in FIG. 2A and FIG. 4B illustrates resistiveproperties of the common source 208 shown in FIG. 3A. Contacts 111 (FIG.2A) for applying voltage to the source lines 108 may be positioned atend portions of the source lines 108, such as at a top and bottom of thesource line 108 as illustrated in FIG. 4A. Similarly, source powercontacts 211 (FIG. 3A) for applying voltage to the common source 208 maybe positioned at end portions of the common source 208. A maximumresistance of the common source 208 may be reduced compared to a maximumresistance of the source line 108. As shown in FIG. 4A, a maximumresistance of each source line 108 may be estimated by considering thesource line 108 as a linear series of resistors (illustrated asrectangles) between each source contact 110. A maximum electricalresistance through the source line 108 at a source contact 110 in acolumn of N cells may be about R*N/2, where R is a resistance of asegment of the source line 108 between adjacent source contacts 110.

As shown in FIG. 4B, a maximum resistance of the common source 208 maybe estimated by computer simulation by considering the common source 208as a two-dimensional grid of resistors (illustrated as rectangles) witha source contact 210 at each grid intersection between the resistors. Amaximum electrical resistance through the common source 208 at a sourcecontact 210 in a column of N cells may be estimated as about R, where Ris a resistance of a segment of the common source 208 between adjacentsource contacts 210. Thus, where the number N of cells in a column isgreater than 2, the common source 208 may exhibit a significantlyreduced resistance compared to linear source lines 108. The reducedresistance of the common source 208 may allow a reduced current to beapplied to a source of each memory cell 201.

In addition, since the resistance of the common source 208 to access anygiven cell 201 in the array 200 is not significantly dependent on thenumber of cells in the array 200, a nominal resistance of a materialselected for the common source 208 is less significant than in materialsselected for the linear source lines 108 of the linear array 100.Accordingly, conductive materials having relatively higher resistancemay be selected for the common source 208 compared to materials selectedfor linear source lines 108.

By way of example and not limitation, a copper source line 108 or commonsource 208 may have a resistance of about 2.45-3.93 Ω per cell 101, 201assuming a line width of between about 21 nm and about 23 nm and a lineheight of about 55 nm. A tungsten source line 108 may have a resistanceof about 13.38-17.47Ω per cell 101 assuming a line width of betweenabout 21 nm and about 23 nm and a line height of about 30 nm. A tungstencommon source 208 may have a resistance of about 18.93-21.47Ω per cell201 assuming a line width of between about 21 nm and about 23 nm and aline height of about 30 nm. Based on these assumptions, an estimatedmaximum resistance through the source line 108 or through the commonsource 208 is identified in Table 1 below. The minimum line width of thecommon source 208 is a minimum width thereof between adjacent cells 201.

TABLE 1 Maximum Maximum Maximum Maximum Resistance Resistance ResistanceResistance Material (Ω) for 128 (Ω) for 256 (Ω) for 512 (Ω) for 1,024and Line Minimum Bits Per Bits Per Bits Per Bits Per Source Type HeightLine Width Column Column Column Column Source Line Copper, 23 nm 160 310630 1260 108 55 nm 22 nm 180 350 700 1400 line height 21 nm 210 410 8201640 Tungsten, 23 nm 860 1710 3430 6850 30 nm 22 nm 950 1910 3810 7620line height 21 nm 1120 2240 4470 8940 Common Source Copper, 23 nm 3.53.5 3.5 3.5 208 55 nm 22 nm 3.6 3.6 3.6 3.6 line height 21 nm 3.9 3.93.9 3.9 Tungsten, 23 nm 13.4 13.4 13.4 13.4 30 nm 22 nm 14.9 14.9 14.914.9 line height 21 nm 17.5 17.5 17.5 17.5

By way of example, an acceptable maximum external resistance value fordual gate arrangements may be about 1000Ω or less to achieve sufficientcurrent for writing data to the cells 101, 201, such as when a diameterof the MTJs 102, 202 is about 20-30 nm and the MTJs 102, 202 have amagnetic field oriented perpendicular to a substrate. Accordingly,tungsten may not be a viable option for the source lines 108 having 256to 512 cells (e.g., “bits”) per column in the array 100 illustrated inFIG. 2A. Tungsten may only be available for higher line widths and lowerbits per column, such as at least about 22 nm line width and 128 bits orless per column, since smaller line widths and/or higher bits per columnmade from tungsten exhibit maximum resistance values more than 1000Ω.Moreover, source lines 108 may not be feasible with 1,024 bits percolumn regardless of whether copper or tungsten is selected for thesource lines 108 since the maximum resistance is greater than 1000Ωusing either material.

On the other hand, when an array 200 having a common source 208 (FIG.3A) is used, rather than a linear array 100 having source lines 108(FIG. 2A) as described above, resistance values may be well below the1000Ω threshold (e.g., about 20Ω or less) for all line widths betweenabout 21 nm and about 23 nm and for all quantities between 128 and 1,024bits per column using either copper or tungsten for the common source208. Thus, the common source 208 configuration allows the use ofdifferent materials (e.g., materials having higher nominal resistance),arrays 200 having a higher number of cells (e.g., bits) per column,and/or linear portions of the common source 208 having a smaller linewidth and/or height. Tungsten may have advantages over copper whenemployed as a source material in manufacturability, reduction ofimpurities and contamination of adjacent features, smaller line height,and cost, for example.

Although copper and tungsten are analyzed and discussed above as acomparative example and to show certain advantages of the common sourceconfiguration, additional conductive materials may also be used as amaterial for the common source 208. For example, copper, tungsten,titanium, tantalum, aluminum, silver, gold, conductive silicidesthereof, conductive nitrides thereof, or combinations thereof may beselected and used for the common source 208.

FIG. 5 illustrates the array 200 of FIG. 3A, with section lines A-A andB-B identified. The section line A-A extends through a row of MTJs 202and source contacts 210 and along a data line 204. The section line B-Bextends through a column of MTJs 202 and source contacts 210 andparallel to access lines 206.

FIGS. 6A-6D illustrate cross-sectional views of the array 200 of FIG. 5.FIG. 6A shows a cross-sectional view of the array 200 through sectionline A-A of FIG. 5. FIG. 6B shows a cross-sectional view of the array200 through section line B-B of FIG. 5. FIG. 6C shows a cross-sectionalview of a peripheral portion 250 of a memory device including the array200. FIG. 6D shows a cross-sectional view of the embodiment of the array200 of FIG. 6A.

Referring to FIGS. 6A and 6B, the access lines 206 may be formed on orin a semiconductor substrate 220. The semiconductor substrate 220 may bea conventional silicon substrate or other bulk substrate includingsemiconductor material. As used herein, the term “bulk substrate” meansand includes not only silicon wafers, but also silicon-on-insulator(“SOI”) substrates, such as silicon-on-sapphire (“SOS”) substrates orsilicon-on-glass (“SOG”) substrates, epitaxial layers of silicon on abase semiconductor foundation, or other semiconductor or optoelectronicmaterials, such as silicon-germanium (Si_(1-x)Ge_(x), where x is, forexample, a mole fraction between 0.2 and 0.8), germanium (Ge), galliumarsenide (GaAs), gallium nitride (GaN), or indium phosphide (InP), amongothers. Furthermore, when reference is made to a “substrate” in thisdescription, previous process stages may have been utilized to formmaterial, regions, or junctions in the base semiconductor structure orfoundation.

By way of example and not limitation, the access lines 206 may be formedof one or more conductive materials, such as a tungsten material atleast partially surrounded by a titanium nitride material. Portions(e.g., lower portions) of the access lines 206 may be electricallyisolated from the surrounding semiconductor substrate 220 by adielectric material, such as a silicon dioxide material. An upperportion of the access lines 206 may include, for example, a conductivemetal silicide material, such as tungsten silicide. A dielectric gatematerial may be positioned over the access lines 206. The access lines206 may extend in the column direction (i.e., into-and-out of the pagewhen viewed in the perspective of FIG. 6A, left-and-right when viewed inthe perspective of FIG. 6B), with two access lines 206 corresponding toeach memory cell 201. Shallow trench isolation (STI) regions 222 of adielectric material may be positioned in the semiconductor substrate 220to electrically isolate adjacent memory cells 201 from each other.Portions of the semiconductor substrate 220 between the access lines 206of adjacent cells 201 may define a semiconductor source region 224.Portions of the semiconductor substrate 220 between the access lines 206of a single cell 201 may define a semiconductor drain region 226. Incertain operations (e.g., writing data from a “1” state to a “0” state),the semiconductor source region 224 may act as a drain, while thesemiconductor drain region 226 may act as a source. Accordingly, thenomenclature for the semiconductor source region 224 and thesemiconductor drain region 226 is used for convenience and clarity inunderstanding this disclosure, but it is to be understood that thefunctions thereof may be switched during certain operations.

One or more dielectric materials 228 (e.g., a gate oxide material) maybe positioned over the semiconductor substrate 220 and access lines 206.Semiconductor material 240 may be disposed over the one or moredielectric materials 228 forming the active region for the channel.Conductive source contacts 210 (including lower source contact portions210A and upper source contact portions 210B) and the conductive cellcontacts 234 may extend from the semiconductor substrate 220 through theone or more dielectric materials 228. The common source 208 may bepositioned over and operably coupled to the source contacts 210. Asdiscussed above, the common source 208 may be configured as a grid ofconductive material that is operably coupled to adjacent cells 201 inboth the row direction and the column direction. A conductive cellcontact 234 (including lower contact portion 234A and upper contactportion 234B) may be positioned over and operably coupled to each of thedrain regions 226. The conductive cell contact 234 may include one ormore conductive materials. By way of non-limiting example, the lowercontact portion 234A and the upper contact portion 234B may each includea tungsten material at least partially surrounded by a titanium nitridematerial. MTJ lower electrode material 235 (including lower MTJ portion235A and upper MTJ portion 235B) may be positioned over and operablycoupled to the upper contact portion 234B of the conductive cell contact234. The MTJ lower electrode material 235 may include a titanium nitridematerial in the lower MTJ portion 235A and a tantalum material in theupper MTJ portion 235B over the titanium nitride material, for example.In some embodiments, other conductive materials may be used for theconductive cell contact 234, as selected by one of ordinary skill in theart.

The MTJs 202 may be respectively positioned over and may be operablycoupled to the conductive cell contacts 234 through the MTJ lowerelectrode material 235. The MTJs 202 may include a fixed magnetic regionand a free magnetic region separated by a non-magnetic region, asdiscussed above. The fixed and free magnetic regions may have a magneticorientation that is substantially parallel to the semiconductorsubstrate 220 (i.e., horizontally from the perspective of FIGS. 6A and6B) or, alternatively, may have a magnetic orientation that issubstantially perpendicular to the semiconductor substrate 220 (e.g.,vertically from the perspective of FIGS. 6A and 6B).

The data lines 204 may be positioned over and operably coupled to theMTJs 202. A material layer 203 may optionally be formed between the datalines 304 and the MTJs 302. In some embodiments, the material layer 203may be configured to apply a spin current to the MTJs 302. The datalines 204 may extend in the row direction. The data lines 204 mayinclude one or more conductive materials, such as copper, tungsten,titanium, tantalum, conductive nitrides thereof, conductive silicidesthereof, or combinations thereof, for example.

Referring to FIG. 6C, the peripheral portion 250 of a device includingthe array 200 of memory cells 201 (FIGS. 6A and 6B) may include, forexample, read/write circuitry, a bit line reference, and an amplifier onor over the semiconductor substrate 220. The read/write circuitry mayinclude access devices (e.g., transistors) 252 and peripheral conductivelines 254. Peripheral isolation trenches 256 filled with a dielectricmaterial (e.g., silicon dioxide) may be positioned in the semiconductorsubstrate 220 to electrically isolate adjacent access transistors 252.

By way of example and not limitation, the peripheral conductive lines254 may include copper, tungsten, or a combination of copper andtungsten. In some embodiments, an upper portion 254B of the peripheralconductive lines 254 may include copper and a lower portion 254A of theperipheral conductive lines 254 may include tungsten. In someembodiments, both the upper portion 254B and the lower portion 254A ofthe peripheral conductive lines 254 may include copper, or both theupper portion 254B and the lower portion 254A may include tungsten. Theperipheral conductive lines 254 including the upper portion 254B and thelower portion 254A may operably connect the access transistors 252 ofthe peripheral portion 250 to the memory cells 201 (FIGS. 6A and 6B) ofthe array 200.

Referring to FIG. 6D, each individual memory cell 201 may include anaccess device configured as a dual-gate, dual-channel access device(e.g., access transistor) coupled to the storage element. For example,the memory cell 201 of FIG. 6A includes access lines 206A, 206B formingtwo gates for the access device for the individual memory cell 201.Corresponding active regions 240A, 240B associated with a commonconductive cell contact 234 may provide different channels for theaccess device. As a result, the first active region 240A provides afirst channel for its adjacent conductive source contact 210 (e.g.,source 224A), the first access line 206A (e.g., first gate), and theconductive cell contact 234 (e.g., drain region 226). The second activeregion 240B provides a second channel for its adjacent conductive sourcecontact 210 (e.g., source 224B), the second access line 206B (e.g.,second gate), and the conductive cell contact 234 (e.g., drain region226). In operation, current may flow, for example, from the first source224A and the second source 224B to the drain region 226 by passingthrough the active region 240A and the second active region 240B,respectively, as shown by direction lines 245A and 245B. At other stagesof operation, the current direction may be reversed. In other words, thecurrent may flow from the region designated as the drain region 226,through the first active region 240A and the second active region 240B,to each of the regions designated as the first source 224A and thesecond source 224B, respectively.

Accordingly, a memory device is disclosed that includes an array ofmemory cells. Each of the memory cells of the array may include at leastone access line extending in a first (e.g., column) direction, and acell contact operably coupled to an access device (e.g., a drain side ofthe access device). A magnetic tunnel junction region may be operablycoupled to the cell contact. At least one data line may be operablycoupled to the magnetic tunnel junction region and may extend in asecond (e.g., row) direction transverse to the column direction. Atleast one source contact may be operably coupled to the access device(e.g., on a source side of the access device). A common source may beoperably coupled to the at least one source contact. The common sourcemay include intersecting regions of first linear portions and secondlinear portions extending transverse to one another. Each of the firstlinear portions and the second linear portions may extend at an acuteangle to each of the first direction and the second direction. Thecommon source may operably couple the at least one source contact ofeach of the memory cells of the array to the at least one source contactof adjacent memory cells of the array in both the first direction andthe second direction.

FIGS. 7 through 14 show a method of forming an array 300 of memory cells301 according to an embodiment of the present disclosure. Referring toFIG. 7, a semiconductor substrate 320 may be provided. Dielectric STIregions and access line trenches 305 may be formed in the semiconductorsubstrate 320. The access line trenches 305 may be at least partiallyfilled with one or more conductive materials to form access lines 306(e.g., word lines). For example, the access line trenches 305 may belined with a conformal dielectric material (e.g., silicon dioxide) andan outer conductive material, such as titanium nitride, may beconformally formed over inner surfaces of the dielectric material withinthe access line trenches 305. The remaining portion of the access linetrenches 305 may be filled with an inner conductive material, such astungsten. An upper portion of the conductive material within the accessline trenches 305 may be converted to a metal silicide material, such astungsten silicide, by diffusing silicon into the conductive material, toform the access lines 306.

Referring to FIG. 8, a gate dielectric material 307 and a firstinterlayer dielectric material 328A may be formed over the semiconductorsubstrate 320 and access lines 306. For example, the gate dielectricmaterial 307 may be a silicon dioxide material. The first interlayerdielectric material 328A may be one or more dielectric materials such asoxides (e.g., silicon dioxide) and/or nitrides (e.g., silicon nitride).

Referring to FIG. 9, openings 309 may be formed through the firstinterlayer dielectric material 328A and gate dielectric material 307between adjacent access lines 306, to expose the semiconductor substrate320. The openings 309 may be filled with one or more conductivematerials to form lower source contact portions 310A and lower cellcontact portions 334A. The one or more conductive materials may include,for example, an outer conformal layer of titanium nitride and an innertungsten material. Excess conductive materials, if any, may be removedfrom over the first interlayer dielectric material 328A, such as by achemical-mechanical polishing (“CMP”) process.

Referring to FIG. 10, a second interlayer dielectric material 328B maybe formed over the first interlayer dielectric material 328A, lowersource contact portions 310A, and lower cell contact portions 334A.Source contact openings 311 may be formed through the second interlayerdielectric material 328B and over the lower source contact portions 310Ato expose the lower source contact portions 310A. One or more conductivematerials may be formed in the source contact openings 311 to form uppersource contact portions 310B. For example, an outer conformal layer oftitanium nitride and an inner tungsten material may be used to form theupper source contact portions 310B. Excess conductive materials, if any,may be removed from over the second interlayer dielectric material 328B,such as by a CMP process. The lower and upper source contact portions310A, 310B may define source contacts 310.

Referring to FIG. 11, a common source 308 may be formed over and incontact with the source contacts 310, and over the second interlayerdielectric material 328A. The common source 308 may be patterned toresult in a structure similar to the common source 208 described abovewith reference to FIG. 3A. Accordingly, openings 316 (e.g., cutouts) maybe formed over the lower cell contact portions 334A, but the commonsource 308 may operably connect adjacent source contacts 310 to eachother in both column and row directions. The common source 308 mayinclude a conductive material, such as copper, tungsten, titanium,tantalum, aluminum, gold, conductive silicides thereof, conductivenitrides thereof, or combinations thereof. A dielectric mask material317 may be formed over the conductive material of the common source 308and may be used for patterning the common source 308.

Referring to FIG. 12, upper cell contact portions 334B may be formedover the lower cell contact portions 334A and through the openings 316in the common source 308. The upper cell contact portions 334B may beformed using a so-called “self-alignment contact” process, as follows. Adielectric spacer material 318, such as a silicon nitride material, maybe formed over the dielectric mask material 317 and/or the common source308. Portions of the dielectric spacer material 318 may be removed fromhorizontal surfaces, such as by using an anisotropic etch process, whileother portions of the dielectric spacer material 318 may remain oververtical surfaces, such as along inner side walls of the openings 316. Asacrificial dielectric material, such as silicon dioxide, havingdifferent etch properties than the dielectric spacer material 318 may beformed over the structure. A top surface of the structure may beplanarized, such as by a CMP process. Remaining portions of thesacrificial dielectric material (e.g., portions within the openings 316and between the remaining dielectric spacer materials) may be removed,as well as an underlying portion of the second interlayer dielectricmaterial 328B. This removal process may expose the lower cell contactportions 334A through the openings 316. One or more conductive materialsmay be formed in the openings 316 and in contact with the lower cellcontact portions 334A to form upper cell contact portions 334B, whichmay extend through the second interlayer dielectric material 328B andthrough the openings 316 in the common source 308 between the dielectricspacer materials 318. The one or more conductive materials may be, forexample, an outer layer of titanium nitride and an inner portion oftungsten. Excess conductive materials, if any, may be removed from overthe structure, such as by a CMP process, to result in a structure likethat shown in FIG. 12.

The process described with reference to FIGS. 10 through 12 is a processin which the common source 308 is formed prior to the upper cell contactportions 334B. However, the disclosure is not so limited. Rather, thedisclosure also includes processes in which the upper cell contactportions 334B are formed over the lower cell contact portions 334A,after which the upper source contact portions 310B and the common source308 are formed and operably coupled to the lower source contact portions310A. Given the processes described above, one of ordinary skill in theart is capable of forming the upper bit contact portions 334B prior tothe common source 308, as desired.

Referring to FIG. 13, an MTJ lower electrode material 335 (includinglower MTJ portion 335A and upper MTJ portion 335B) may be formed overthe upper cell contact portion 334B such as, for example, for improvedadhesion and electrical properties of the MTJs 302 to be formedthereover. The MTJ lower electrode material 335 may include one or moreconductive materials, such as a titanium nitride material in the lowerMTJ portion 335A formed over and in contact with the upper cell contactportion 334B, and a tantalum material in the upper MTJ portion 335Bformed over and in contact with the titanium nitride material. However,one of ordinary skill in the art is capable of selecting the appropriatematerial(s) for the MTJ lower electrode material 335 considering thematerial and electrical properties of the MTJs 302. The MTJs 302 may beformed over and in contact with the MTJ lower electrode material 335.The MTJs 302 may be formed as known in the art, such as to have thestructure shown in FIG. 1. However, other MTJs 302 are known and capableof implementation with embodiments of this disclosure, as known by oneof ordinary skill in the art. The MTJ lower electrode material 335 andMTJs 302 may be formed in and through an upper interlayer dielectricmaterial 319, which may include one or more dielectric materials (e.g.,silicon dioxide and silicon nitride). The lower cell contact portions334A and upper cell contact portions 334B may together define conductivecell contacts 334 (e.g., bit contacts).

Referring to FIG. 14, data lines 304 (e.g., bit lines) may be formedover the MTJs 302. A material layer 303 may optionally be formed betweenthe data lines 304 and the MTJs 302. In some embodiments, the materiallayer 303 may be configured to apply a spin current to the MTJs 302.MTJs 302 that are aligned in a row direction may be operably coupled tothe same data line 304. The data lines 304 may include one or moreconductive materials, such as copper, tungsten, titanium, tantalum,aluminum, gold, conductive silicides thereof, conductive nitridesthereof, or combinations thereof. Each memory cell 301 of the array 300may include an MTJ 302, a conductive cell contact 334, at least onesource contact 310, and a portion of the common source 308. Each memorycell 301 of the array 300 is coupled to an access device (e.g.,transistor) operably coupled to at least one access line 306 (e.g., twoaccess lines 306), and a data line 304. The array 300 may, in plan view,have a similar configuration as the array 200 shown in FIG. 3A, forexample.

Accordingly, the present disclosure includes methods of fabricatingmemory devices. In accordance with such methods, an array of memorycells may be formed. Each of the memory cells of the array may be formedby forming at least one access line extending in a first (e.g., column)direction. The access line may be formed in or on a semiconductorsubstrate. A cell contact may be formed and operably coupled to anaccess device. A magnetic tunnel junction region may be formed andoperably coupled to the cell contact. At least one data line may beformed and operably coupled to the magnetic tunnel junction region andmay extend in a second (e.g., row) direction transverse to the columndirection. At least one source contact may be formed and operablycoupled to the access device. A common source may be formed and operablycoupled to the at least one source contact. The common source may bepatterned to operably couple the at least one source contact of adjacentmemory cells of the array in both the first (e.g., column) direction andthe second (e.g., row) direction. The common source may include linearportions extending transverse to one another and extending at an acuteangle to each of the first direction and the second direction.

Embodiments of the disclosure may be implemented in STT-MRAM devices aswell as other memory devices. Indeed, one of ordinary skill in the artmay implement embodiments of the disclosure in a number of differentsemiconductor devices, example embodiments of which have been describedherein.

FIG. 15 is a schematic block diagram of an electronic system 400according to an embodiment of the present disclosure. The electronicsystem 400 includes a processor 410 operably coupled with a memorydevice 420, one or more input devices 430, and one or more outputdevices 440. The electronic system 400 may be a consumer electronicdevice, such as a desktop computer, a laptop computer, a tabletcomputer, an electronic reader, a smart phone, or other type ofcommunication device, as well as any type of computing systemincorporating a memory device. The memory device 420 may be or include amemory device (e.g., one or more of the memory devices 200, 300) thatincludes a common source (e.g., one or more of the common sources 208,308) as discussed above.

Accordingly, the present disclosure includes electronic systems thatinclude a memory device. The electronic systems may include at least oneprocessor, at least one input device and at least one output deviceoperably coupled to the at least one processor, and at least one memorydevice operably coupled to the at least one processor. The memory devicemay include an array of memory cells including conductive access lines.The conductive access lines may be formed in or on a semiconductorsubstrate, conductive data lines, and magnetic tunnel junction regionseach operably coupled to and between one of the conductive data linesand, through a conductive cell contact, two of the conductive accesslines. The conductive access lines may extend in a first (e.g., column)direction and the conductive data lines may extend in a second (e.g.,row) direction transverse to the column direction. Access devices may beoperably coupled to the magnetic tunnel junction regions, and each ofthe access devices may include two channels. A common source may beoperably coupled to each of the conductive access lines through aconductive source contact and to each of the memory cells of the array.

While certain illustrative embodiments have been described in connectionwith the figures, those of ordinary skill in the art will recognize andappreciate that embodiments encompassed by the disclosure are notlimited to those embodiments explicitly shown and described herein.Rather, many additions, deletions, and modifications to the embodimentsdescribed herein may be made without departing from the scope ofembodiments encompassed by the disclosure, such as those hereinafterclaimed, including legal equivalents. In addition, features from onedisclosed embodiment may be combined with features of another disclosedembodiment while still being encompassed within the scope of thedisclosure as contemplated by the inventors.

1. A memory device, comprising: an array of memory cells, comprising: amagnetic tunnel junction region; an access line extending in a firstdirection; a data line operably coupled to the magnetic tunnel junctionregion and extending in a second direction transverse to the firstdirection; a source contact operably coupled to an access devicecorresponding to the access line; and a common source configured to beselectively operably coupled to the each memory cell of the array;wherein the common source comprises intersecting regions of first linearportions and second linear portions extending transverse to one another,each of the first linear portions and the second linear portionsextending at an acute angle to each of the first direction and thesecond direction.
 2. The memory device of claim 1, wherein the magnetictunnel junction region comprises: a fixed magnetic region; a freemagnetic region; and a non-magnetic region between the fixed magneticregion and the free magnetic region.
 3. The memory device of claim 2,wherein the fixed magnetic region and the free magnetic region havemagnetic orientations perpendicular to a semiconductor substrate overwhich the magnetic tunnel junction region is located.
 4. The memorydevice of claim 1, wherein the memory cells of the array are staggered,such that a first row of aligned memory cells is offset from a secondrow of aligned memory cells immediately adjacent to the first row. 5.The memory device of claim 1, wherein the common source comprises atungsten material.
 6. The memory device of claim 1, wherein the accessline of each of the memory cells of the array comprises a dual-gateaccess device.
 7. The memory device of claim 1, wherein the memorydevice is a dual-channel memory device comprising a first active regionand a second active region associated with a common cell contact.
 8. Thememory device of claim 7, wherein the dual-channel memory device isconfigured to provide current from a first source contact to a drainregion through the first active region and from a second source contactto the drain region through the second active region.
 9. An electronicsystem comprising: at least one processor; at least one input device andat least one output device operably coupled to the at least oneprocessor; at least one memory device operably coupled to the at leastone processor, the at least one memory device comprising: an array ofmemory cells comprising: conductive access lines extending in adirection; conductive data lines extending in a direction transverse tothe direction; magnetic tunnel junction regions each operably coupled toand between one of the conductive data lines and two of the conductiveaccess lines; access devices operably coupled to the magnetic tunneljunction regions, each of the access devices having two channels; and acommon source operably coupled to each of the conductive access linesand to each of the memory cells of the array.
 10. The electronic systemof claim 9, wherein the common source comprises first linear portionsand second linear portions, the first linear portions extending betweenabout 35 degrees and about 55 degrees from the conductive data lines,the second linear portions transverse to the first linear portions andextending between about 35 degrees and about 55 degrees from theconductive access lines.
 11. The electronic system of claim 9, whereinthe access devices comprise dual-channel transistors, each of thedual-channel transistors comprising opposing source regions and a commondrain region.
 12. The electronic system of claim 11, wherein each of thedual-channel transistors comprises two active regions, each of the twoactive regions being located between a respective source region and thecommon drain region.
 13. The electronic system of claim 9, wherein theconductive access lines are positioned in trenches formed in asemiconductor substrate.
 14. The electronic system of claim 9, whereineach of the magnetic tunnel junction regions comprises a lower portioncomprising a titanium nitride material and an upper portion comprising atantalum material.
 15. A method of forming an array of memory cells,comprising: forming an access device having an access line extending ina first direction; forming a cell contact coupled to the access device;forming a magnetic tunnel junction region over the cell contact; forminga data line over the magnetic tunnel junction region, the data lineextending in a second direction transverse to the first direction; andforming a common source coupled to source contacts of adjacent memorycells of the array in both the first direction and the second direction,the common source comprising linear portions extending transverse to oneanother and extending at an acute angle to each of the first directionand the second direction.
 16. The method of claim 15, wherein the commonsource is formed prior to forming the cell contact being formed andoperably coupled to the access line.
 17. The method of claim 15, whereinforming the access device comprises: forming two trenches in asemiconductor substrate; and filling the two trenches with at least oneconductive material to define two access lines associated with theaccess device.
 18. The method of claim 15, wherein forming the commonsource comprises forming an opening in the common source through whichthe cell contact extends.
 19. The method of claim 15, wherein formingthe access device comprises forming two channels configured to providetwo separate sources of current to a common cell contact.
 20. The methodof claim 15, wherein forming the common source comprises forming thelinear portions to extend at angles of between about 35 degrees andabout 55 degrees from the first direction and the second direction.